Table of Contents

Part I. III-Nitride Materials and Devices: 1. Reduction in gate leakage current of AlGaN/GaN HEMT by rapid thermal oxidation T. Sreenidhi, A. Azizur Rahman, Arnab Bhattacharya, Amitava DasGupta and Nandita DasGupta; 2. High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation Andrzej Taube, Maciej Kozubal, Jakub Kaczmarski, Marcin Juchniewicz, Adam Barcz, Jan Dyczewski, Rafał Jakieła, Elżbieta Dynowska, Michał Adam Borysiewicz, Paweł Prystawko, Jakub Jasiński, Paweł Borowicz, Eliana Kamińska and Anna Piotrowska; 3. InGaN structure influence on efficiency droop Oleg Rabinovich; 4. Atomic-layer deposition for improved performance of III-N avalanche photodiodes John Hennessy, L. Douglas Bell, Shouleh Nikzad, Puneet Suvarna, Jeffrey M. Leathersich, Jonathan Marini and F. (Shadi) Shahedipour-Sandvik; 5. Electrical characterization of thick InGaN films for photovoltaic applications Yoshitaka Nakano, Liwen Sang and Masatomo Sumiya; 6. Growth of hBN using metallic boron: isotopically enriched h10BN and h11BN T. B. Hoffman, Y. Zhang, J. H. Edgar and D. K. Gaskill; Part II. III-V and II-VI Materials and Devices: 7. Carrier dynamics in self-assembled InAs QD laser structures and broad-area InAs QD lasers grown by molecular beam epitaxy Yongkun Sin, Stephen LaLumondiere, William Lotshaw and Steven C. Moss; 8. Dielectric response of light emitting semiconductor junction diodes: frequency and temperature domain study Kanika Bansal and Shouvik Datta; 9. Carrier dynamics in MOVPE-grown bulk InGaAsNSb materials and epitaxial lift-off GaAs double heterostructures for multi-junction solar cells Yongkun Sin, Stephen LaLumondiere, Nathan Wells, Zachary Lingley, Nathan Presser, William Lotshaw, Steven C. Moss, Tae Wan Kim, Kamran Forghani, Luke J. Mawst, Thomas F. Kuech, Rao Tatavarti, Andree Wibowo and Noren Pan; 10. OMVPE of InAlAs using alternative Al and As precursors Brittany L. Smith, Nichole M. Hoven, Glen Hillier, Seth M. Hubbard and David V. Forbes; 11. Microwave reflection study of ultra-high mobility GaAs/AlGaAs 2D-electron system at large filling factors Tianyu Ye, Ramesh Mani and Werner Wegscheider; 12. Leakage currents of large area InP/InGaAs heterostructures Anders Olsson, Abuduwayiti Aierken, Jani Oksanen, Harri Lipsanen and Jukka Tulkki; 13. Improved electrical properties of Ga2O3:Sn/CIGS hetero-junction photoconductor Kenji Kikuchi, Shigeyuki Imura, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota and Eiji Ohta; 14. Some aspects of AIIIBV and AIIBVI growth Oleg Rabinovich; Part III. Nanostructures, Defects and Other Materials: 15. Production and biofunctionalization of elongated semiconducting nanocrystals for ex-vivo applications Tobias Jochum, Daniel Ness, Marieke Dieckmann, Katja Werner, Jan Niehaus and Horst Weller; 16. Optical fabrication of semiconductor single-crystalline microspheres in superfluid helium Shinya Okamoto, Satoshi Ichikawa, Yosuke Minowa and Masaaki Ashida; 17. Carbon-related deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi and Hiroji Kawai; 18. GaSb on Si: structural defects and their effect on surface morphology and electrical properties Shailesh Kumar Madisetti, Vadim Tokranov, Andrew Greene, Steven Novak, Michael Yakimov, Serge Oktyabrsky, Steven Bentley and Ajey P. Jacob; 19. Cause of forward voltage degradation for 4H-SiC PiN diode with additional process Tetsuro Hemmi, Koji Nakayama, Katsunori Asano, Tetsuya Miyazawa and Hidekazu Tsuchida; 20. Electrical characteristics of TiW/ZnO Schottky contact with ALD and PLD Mei Shen, Amir Afshar, Manisha Gupta, Gem Shoute, Ken Cadien, Ying Yin Tsui and Doug Barlage.

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This symposium proceedings volume represents recent advances in compound semiconductors for electronics, detection, and processing.