Table of Contents

Saturation of Free Carrier Concentration in Semiconductors The Amphoteric Defect Model Maximum Doping Limits in GaAs Other Group III-V Semiconductors Group III-Nitrides Group II-VI Semiconductors Group I-III-VI2 Ternaries Other Semiconductors Unintentional Doping Amphoteric Dopants Point Defect Formation Near Surfaces Point Defect Equilibria near the Semiconductor Surfaces Point Defect Formation Kinetics in the Sub-Surface Layer - Bottleneck Effect Bottleneck Related Phenomena Optical Characterization of Plasma Etching Induced Damage Ion-assisted Etching: Understanding the Problem Optical Damage Assessment Techniques: Choosing a Method The Range of Ion-Induced Damage Dry Etch Damage in Widegap Semiconductor Materials Damage in the InGaA1N System Damage in SiC Damage in II-VI Compounds Generation, Removal, and Passivation of Plasma Process Induced Defects Dry Etching Systems Plasma Process Indu

About the Author

Wada, Kazumi