Table of Contents

1 Fundamentals (Theory) Band Structure (Monolayer grapheme, Bilayer and multilayer graphene, Graphene nanoribbons Transport properties Optical Properties Raman Spectroscopy 2 Material Growth Exfoliation Chemical Vapor Deposition (CVD) Expitaxial Graphene (SiC, SiC on Silicon) (Molecular Beam Growth) Chemical Exfoliation (Graphene, Reduced Graphene Oxide) 3 Electronic Devices Graphene Field Effect Transistors Graphene Bilayer FETs Graphene Nanoribbon FETs Tunnel Transistors 4 Optoelectronics Photodetectors (UV, IR-FIR, THz, Microcavitiy enhanced Responsivity, Plasmonic enhancement) Modulators 5 Transparent conductors Displays Solar cells 6 Printable Electronics

About the Author

Max C. Lemme is Professor for Graphene-based Nanotechnology at the University of Siegen in Germany. He received his Dr.-Ing. degree in Electrical Engineering from RWTH Aachen University in 2003. He was with nanotechnology start-up AMO GmbH, Aachen, Germany, before he joined Harvard University in Cambridge, USA, in 2008. In 2008 he has been appointed Guest-Professor at KTH, Sweden, where he is leading the graphene research within the School of ICT. He received the young researchers' award "NanoFutur" in Germany, a Humboldt Fellowship, an ERC Consolidator Grant and a Heisenberg-Professorship from the German Research Foundation. Besides graphene devices and technology, his research interests include non-conventional nano-CMOS device and novel high-k materials for gate stacks.