Table of Contents

I. Group IV Semiconductors. Modeling of the kinetics of dislocation loops (E. Lampin, V. Senez). Influence of argon and hydrogen ions energy on the structure of a-Si:H prepared by ion-beam-assisted evaporation (H. Rinnert et al.). EPR study of a-Si structural relaxations (B. Pivac et al.). II. Group III-V and Other Semiconductors. Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements (M.C. Ridgway et al.). Peculiarities of defect generation in Si+-implanted GaAs (211) (V.T. Bublik et al.). III. Ceramics and Oxides. Structural stability of ion bombarded non-metallic systems (P.M. Ossi, R. Pastorelli). Thermal stress resistance of ion implanted sapphire crystals (V.N. Gurarie et al.). IV. Phase Formation. Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon (J.K.N. Lindner, B. Stritzker). Wave-ordered structures formed on SOI wafers by reactive ion beams (V.K. Smirnov et al.). V. Optical Materials and Nanoclusters. Growth and characterization of Ge nanocrystals (S. Guha et al.). Thin amorphous gallium nitride films formed by ion beam synthesis (S.R.P. Silva et al.). VI. Measurement Techniques. Glancing incidence diffuse X-ray scattering studies of implantation damage in Si (K. Nordlund et al.). Magnetic behavior of Ni+ implanted silica (O. Cíntora-González et al.).